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2SK3798
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV)
2SK3798
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 30 4 12 40 345 4 4.0 150 -55~150 A W mJ A mJ C C
1: Gate 2: Drain 3: Source
Unit V V V
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-67 2-10U1B
Weight : 1.7 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit C/W C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C, L = 39.6 mH, IAR = 4.0 A, RG = 25 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution.
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2SK3798
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 4 A - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Test Condition VGS = 30 V, VDS = 0 V IG =10 A, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 2 A VDS = 20 V, ID = 2 A Min Typ. Max Unit
30
900 2.0

2.5 2.8 800 20 85 20 65 45 165 26 14 12
10
100
A
V
A
V V
4.0 3.5
1.4
S
Yfs
Ciss Crss Coss tr ton

VDS = 25 V, VGS = 0 V, f = 1 MHz
pF
10 V VGS 0V 50 ID = 2 A VOUT

ns

RL = 100 VDD 200 V -

nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition Min Typ. Max 4 12 Unit A A V ns

IDR = 4 A, VGS = 0 V IDR = 4 A, VGS = 0 V, dIDR/dt = 100 A/s

1100 8.3
-1.7
C
Marking
K3798
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3798
ID - VDS
4 6 10 5.75 COMMON SOURCE Tc = 25C PULSE TEST 5.5
ID - VDS
8 COMMON SOURCE Tc = 25C PULSE TEST 6 6 10
DRAIN CURRENT ID (A)
3
5.25 2 5 1 4.75
DRAIN CURRENT ID (A)
4
5.75
5.5 2 5.25 5 4.75 0 0 VGS = 4.5 V 4 8 12 16 20 24 28 32 36
VGS = 4.5 V 0 0 4 8 12 16 20 24
DRAIN-SOURCE VOLTAGE
VDS
(V)
DRAIN-SOURCE VOLTAGE
VDS
(V)
ID - VGS
COMMON SOURCE Tc = -55C
VDS - VGS
VDS (V)
8
20 COMMON SOURCE Tc = 25 16 PULSE TEST
DRAIN CURRENT ID (A)
VDS = 20 V 6 PULSE TEST 25
DRAIN-SOURCE VOLTAGE
12
ID = 4 A
4 100
8 2 4 1
2
0 0
2
4
6
8
10
0 0
4
8
12
16
20
GATE-SOURCE VOLTAGE
VGS
(V)
GATE-SOURCE VOLTAGE
VGS
(V)
Yfs - ID FORWARD TRANSFER ADMITTANCE Yfs (S)
10 VDS = 20 V PULSE TEST
RDS (ON) - ID
10
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
COMMON SOURCE Tc = -55C 25
COMMON SOURCE Tc = 25C PULSE TEST
100 1
VGS = 10, 15 V
0.1 0.1
1
10
1 0.01
0.1
1
10
DRAIN CURRENT ID
(A)
DRAIN CURRENT ID
(A)
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RDS (ON) - Tc
10
IDR - VDS
10 COMMON SOURCE 5 3 Tc = 25C PULSE TEST
DRAIN-SOURCE ON RESISTANCE RDS (ON) ( )
8
6 ID = 4 A 4 1
DRAIN REVERSE CURRENT IDR (A)
COMMON SOURCE VGS = 10 V PULSE TEST
1 0.5 0.3 10 3 0.1 0 VGS = 0, -1 V 1
2
2
0 -80
-40
0
40
80
120
160
-0.4
-0.8
-1.2
-1.6
CASE TEMPERATURE
Tc
(C)
DRAIN-SOURCE VOLTAGE
VDS
(V)
CAPACITANCE - VDS
10000 5
Vth - Tc
GATE THRESHOLD VOLTAGE Vth (V)
(pF)
1000
Ciss
4
CAPACITANCE C
3
100
Coss
2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 -80 -40 0 40 80 120 160
Crss 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 3 5 10 30 50 100
DRAIN-SOURCE VOLTAGE
VDS
(V)
CASE TEMPERATURE
Tc
(C)
PD - Tc
DYNAMIC INPUT / OUTPUT CHARACTERISTICS
VDS (V)
400
VDS
16 400
40
DRAIN-SOURCE VOLTAGE
300
VDD = 100 V
12
200
200
8
20
COMMON SOURCE 100 VGS ID = 4 A Tc = 25C 0 0 PULSE TEST 10 20 30 0 40 4
0 0
40
80
120
160
CASE TEMPERATURE
Tc
(C)
TOTAL GATE CHARGE
Qg
(nC)
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GATE-SOURCE VOLTAGE VGS (V)
60
500
20
DRAIN POWER DISSIPATION PD (W)
2SK3798
rth - tw
NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
10
1
Duty=0.5 0.2
0.1
0.1 0.05 0.02 PDM SINGLE PULSE 0.01 t T Duty = t/T Rth (ch-c) = 3.125C/W
0.01
0.001 10
100
1
10
100
1
10
PULSE WIDTH
tw
(s)
SAFE OPERATING AREA
100 400
EAS - Tch
AVALANCHE ENERGY EAS (mJ)
ID max (PULSED) *
100 s *
300
DRAIN CURRENT ID (A)
10 ID max (CONTINUOUS) * 1 ms *
200
1 DC OPERATION Tc = 25C
100
0.1
0 25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL) Tch (C)
SINGLE NONREPETITIVE PULSE Tc=25 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE.
0.01 1
15 V
100 1000
BVDSS IAR VDD VDS
10
DRAIN-SOURCE VOLTAGE
VDS
(V)
-15 V
TEST CIRCUIT RG = 25 VDD = 90 V, L = 39.6mH
WAVE FORM
AS =
1 B VDSS L I2 B 2 - VDD VDSS
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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